Search results for "Photoinduced effects"

showing 2 items of 2 documents

In-situ observation of beta-ray induced UV optical absorption in a-SiO2: radiation darkening and room temperature recovery

2006

International audience; We studied the optical absorption in the 3.0-6.2 eV range induced in bulk amorphous SiO2 by beta-ray irradiation up to similar to 1 MGy at room temperature. The induced absorption was measured in situ both during irradiation and in the post irradiation time. Our data evidence E', center as the main defect induced by irradiation and the partial decay of their absorption band at about 5.8 eV after irradiation. A quantitative analysis of the time evolution of the induced absorption shows that the transmission recovery observed after irradiation is compatible with the reaction of radiation-induced defects with H-related (H-2, H2O) species diffusing in the amorphous matrix

Absorption spectroscopySilica irradiation effects absorptionAnalytical chemistryOptical spectroscopyWater in glass02 engineering and technology01 natural scienceslaw.inventionAbsorptionlawElectron spin resonance0103 physical sciencesBeta particleMaterials ChemistryOptical fibersIrradiationElectron paramagnetic resonanceAbsorption (electromagnetic radiation)Spectroscopy010302 applied physics[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]RadiationPhotoinduced effectsChemistryirradiation effectsSettore FIS/01 - Fisica SperimentaleSilica021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsAmorphous solidAbsorption bandCeramics and Composites[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Defects0210 nano-technology
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Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser

2009

Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case …

Electron mobilityPhotoluminescenceChemistryDopingAnalytical chemistryCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPhotosensitivityImpurityMaterials ChemistryCeramics and CompositesIrradiationRadiation effects Glasses Laser–matter interactions Optical spectroscopy Defects Optical properties Absorption Lasers Luminescence Photoinduced effects Time resolved measurements Oxide glasses Alkali silicates Aluminosilicates Silica Silicates Radiation Electron spin resonanceSpectroscopyLuminescence
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